? 2004 ixys all rights reserved symbol test conditions maximum ratings v dss t j = 25 c to 175 c 200 v v dgr t j = 25 c to 175 c; r gs = 1 m ? 200 v v gs continuous 20 v v gsm transient 30 v i d25 t c = 25 c74a i dm t c = 25 c, pulse width limited by t jm 200 a i ar t c = 25 c60a e ar t c = 25 c40mj e as t c = 25 c 1.0 j dv/dt i s i dm , di/dt 100 a/ s, v dd v dss , 10 v/ns t j 150 c, r g = 4 ? p d t c = 25 c 480 w t j -55 ... +175 c t jm 175 c t stg -55 ... +150 c t l 1.6 mm (0.062 in.) from case for 10 s 300 c plastic body for 10 s 250 c f c mounting force (plus220) 1.13 /10 nm/lb.in. m d mounting torque (to-247) 1.13/10 nm/lb.in. weight to-247 6.0 g plus220 4.0 g g = gate d = drain s = source tab = drain ds99209(09/04) symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. v dss v gs = 0 v, i d = 250 a 200 v v gs(th) v ds = v gs , i d = 250 a 2.5 5.0 v i gss v gs = 20 v dc , v ds = 0 100 na i dss v ds = v dss 25 a v gs = 0 v t j = 125 c 250 a r ds(on) v gs = 10 v, i d = 0.5 i d25 34 m ? pulse test, t 300 s, duty cycle d 2 % polarht tm hiperfet power mosfet v dss = 200 v i d25 =74 a r ds(on) =34 m ? ? ? ? ? t rr 200 ns n-channel enhancement mode fast recovery diode, avalanche rated features z international standard packages z unclamped inductive switching (uis) rated z low package inductance - easy to drive and to protect advantages z easy to mount z space savings z high power density preliminary data sheet ixfh 74n20p ixfv 74n20p ixfv 74n20ps g s d plus220 (ixfv) g s plus220smd (ixfv-ps) g d s to-247 (ixfh) d (tab) d (tab) d (tab)
ixys reserves the right to change limits, test conditions, and dimensions. ixfh 74n20p ixfv 74n20p ixfv 74n20ps symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. g fs v ds = 10 v; i d = 0.5 i d25 , pulse test 30 44 s c iss 3300 pf c oss v gs = 0 v, v ds = 25 v, f = 1 mhz 800 pf c rss 190 pf t d(on) 23 ns t r v gs = 10 v, v ds = 0.5 v dss , i d = i d25 21 ns t d(off) r g = 4 ? (external) 60 ns t f 21 ns q g(on) 107 nc q gs v gs = 10 v, v ds = 0.5 v dss , i d = 0.5 i d25 24 nc q gd 52 nc r thjc 0.31 k/w r thck (to-247, plus220) 0.21 k/w source-drain diode characteristic values (t j = 25 c, unless otherwise specified) symbol test conditions min. typ. max. i s v gs = 0 v 74 a i sm repetitive 180 a v sd i f = i s , v gs = 0 v, 1.5 v pulse test, t 300 s, duty cycle d 2 % t rr i f = 25 a, -di/dt = 100 a/ s 120 200 ns q rm v r = 100 v 0.4 c i rm 6a ixys mosfets and igbts are covered by 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 b1 6,683,344 6,727,585 one or moreof the following u.s. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 b1 6,534,343 6,710,405b2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 b1 6,583,505 6,710,463 to-247 (ixfh) outline dim. millimeter inches min. max. min. max. a 4.7 5.3 .185 .209 a 1 2.2 2.54 .087 .102 a 2 2.2 2.6 .059 .098 b 1.0 1.4 .040 .055 b 1 1.65 2.13 .065 .084 b 2 2.87 3.12 .113 .123 c .4 .8 .016 .031 d 20.80 21.46 .819 .845 e 15.75 16.26 .610 .640 e 5.20 5.72 0.205 0.225 l 19.81 20.32 .780 .800 l1 4.50 .177 ? p 3.55 3.65 .140 .144 q 5.89 6.40 0.232 0.252 r 4.32 5.49 .170 .216 s 6.15 bsc 242 bsc terminals: 1 - gate 2 - drain 1 2 3 d1 l l3 l1 e1 e e b d c a2 a1 a l2 terminals: 1-gate 2-drain e1 e l2 d l3 l l1 3x b 2x e c a2 a1 a e1 d1 plus220 (ixfv) outline l l3 l2 l1 a1 e1 e d1 e b d c a2 a a3 l4 terminals: 1-gate 2-drain e e1 d l2 a a1 l1 l l3 e 2x b c a2 l4 a3 e1 plus220smd (ixfv-ps) outline
? 2004 ixys all rights reserved fig. 2. extended output characteristics @ 25 o c 0 20 40 60 80 100 120 140 160 180 200 02468101214161820 v d s - volts i d - amperes v gs = 10v 9v 7v 6v 8v 5v fig. 3. output characteristics @ 150 o c 0 10 20 30 40 50 60 70 80 01234567 v d s - volts i d - amperes v gs = 10v 9v 8v 5v 6v 7v fig. 1. output characteristics @ 25 o c 0 10 20 30 40 50 60 70 80 00.511.5 22.533.5 v d s - volts i d - amperes v gs = 10v 9v 8v 7v 6v 5v fig. 4. r ds(on ) norm alized to 0.5 i d25 value vs. junction temperature 0.6 1 1.4 1.8 2.2 2.6 3 -50 -25 0 25 50 75 100 125 150 175 t j - degrees centigrade r d s ( o n ) - normalized i d = 74a i d = 37a v gs = 10v fig. 6. drain current vs. case temperature 0 10 20 30 40 50 60 70 80 -50 -25 0 25 50 75 100 125 150 175 t c - degrees centigrade i d - amperes fig. 5. r ds(on) norm alized to 0.5 i d25 value vs. i d 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 0 20 40 60 80 100 120 140 160 180 200 i d - amperes r d s ( o n ) - normalize d t j = 175oc t j = 25oc v gs = 10v v gs = 10v v gs = 15v ixfh 74n20p ixfv 74n20p ixfv 74n20ps
ixys reserves the right to change limits, test conditions, and dimensions. ixfh 74n20p ixfv 74n20p ixfv 74n20ps fig. 11. capacitance 100 1000 10000 0 5 10 15 20 25 30 35 40 v d s - volts capacitance - picofarads c iss c oss c rss f = 1mhz fig. 10. gate charge 0 1 2 3 4 5 6 7 8 9 10 0 102030405060708090100110 q g - nanocoulombs v g s - volts v ds = 100v i d = 37a i g = 10ma fig. 7. input admittance 0 10 20 30 40 50 60 70 80 90 100 3.5 4 4.5 5 5.5 6 6.5 7 v g s - volts i d - amperes t j = 150oc 25oc -40oc fig. 8. transconductance 0 10 20 30 40 50 60 0 20406080100120 i d - amperes g f s - siemens t j = -40oc 25oc 150oc fig. 9. source current vs. source-to-drain voltage 0 20 40 60 80 100 120 140 160 180 200 0.4 0.6 0.8 1 1.2 1.4 v s d - volts i s - amperes t j = 150oc t j = 25oc fig. 12. forw ard-bias safe operating area 1 10 100 1000 10 100 1000 v d s - volts i d - amperes 100s 1ms dc t j = 175oc t c = 25oc r ds(on) limit 10ms 25 s
? 2004 ixys all rights reserved ixfh 74n20p ixfv 74n20p ixfv 74n20ps fig. 13. m axim um trans ie nt the rm al re s is tance 0.01 0.10 1.00 1 10 100 1000 pulse width - milliseconds r ( t h ) j c - oc / w
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